A High-Performance Top-Gated Graphene Field-Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric
- Journal
- Small
- Vol
- 14 (9)
- Page
- 1703035. 1-1703035. 8
- Year
- 2018
Joong Gun Oh, Kwanyong Pak, Choong Sun Kim, Jae Hoon Bong, Wan Sik Hwang, Sung Gap Im, and Byung Jin Cho, "A High-Performance Top-Gated Graphene Field-Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric", Small, vol. 69, no. 10, pp. 1703035. 1-1703035. 8, Mar. 2018.