Fermi level de–pinning in Ti/GeO2/n–Ge via the interfacial reaction between Ti and GeO2
- Journal
- IEEE Transactions on Electron Devices
- Year
- 2017
Yujin Seo, Tae In Lee, Hyun Jun Ahn, Jung Min Moon, Wan Sik Hwang, Hyun-Yong Yu and Byung Jin Cho, " Fermi level de–pinning in Ti/GeO2/n–Ge via the interfacial reaction between Ti and GeO2", IEEE Transactions on Electron Devices, August. 2017. (Accepted)