The Impact of an Ultrathin Y2O3 layer on GeO2 Passivation in Ge MOS Gate Stacks
- Journal
- IEEE Transactions on Electron Devices
- Year
- 2017
Yujin Seo, Tae In Lee, Chang Mo Yoon, Bo Eun Park, Wan Sik Hwang, Hyungjun Kim, Hyun-Yong Yu and Byung Jin Cho, "The Impact of an Ultrathin Y2O3 layer on GeO2 Passivation in Ge MOS Gate Stacks", IEEE Transactions on Electron Devices, Vol. 64, No.8, pp. 3303-3307, May. 2017