Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10 nm n-type Ge FinFET
- Journal
- IEEE Electron Device Letters
- Year
- 2016
Juhan Ahn, Jeong-Kyu Kim, Sun-Woo Kim, Gwang-Sik Kim, Changhwan Shin, Jong-Kook Kim, Byung Jin Cho and Hyun-Yong Yu, "Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10 nm n-type Ge FinFET", IEEE Electron Device Letters, vol. 37, no. 6, pp. 705-708, Jun. 2016.