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Total 3건 1 페이지

1990
3

"AES study of rapid thermal boron diffusion into silicon from a solid diffusion source in oxygen ambient" J. G. Kim, B. J. Cho, and C. K. Kim, J. Electrochem. Soc, Sep. 1990..
2

"Elimination of slips on silicon wafer edge in rapid thermal process by using a ring oxide" B. J. Cho and C. K. Kim, J. Appl. Phys., Jun. 1990..
1

"Characteristics of NMOS transistors with phosphorus source/drain formed by rapid thermal diffusion" B. J. Cho, J. G. Kim, and C. K. Kim, J. Kor. Inst. Telematics. Electron, Sep. 1990..

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