Journals

  • Home
  • Publication
  • Journals
Characteristics of NMOS transistors with phosphorus source/drain formed by rapid thermal diffusion
Journal
J. Kor. Inst. Telematics. Electron
Author
B. J. Cho, J. G. Kim, and C. K. Kim
Year
1990
Date
Sep. 1990.

B. J. Cho, J. G. Kim, and C. K. Kim, "Characteristics of NMOS transistors with phosphorus source/drain formed by rapid thermal diffusion", J. Kor. Inst. Telematics. Electron., vol. 27, no. 9, pp. 1409-1418, Sep. 1990.