Shallow p+ -n junction formation by Ge pre-amorphization and additional RTA
- Journal
- J. Kor. Appl. Phys.
- Year
- 1996
J. G. Oh, K. H. Lee, B. J. Cho, and J. C. Kim, "Shallow p+ -n junction formation by Ge pre-amorphization and additional RTA", J. Kor. Appl. Phys., vol. 9, no. 4, p. 506, Jul. 1996.
