Impact of nitrogen implantation into polysilicon followed by drive-in process on gate oxide integrity
- Journal
- J. Electrochem. Soc.
- Year
- 1999
B. J. Cho, L. H. Ko, Y. A. Nga, and L. H. Chan, "Impact of nitrogen implantation into polysilicon followed by drive-in process on gate oxide integrity", J. Electrochem. Soc., vol. 146, no. 11, pp. 4259-4262, Nov. 1999.
