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Conduction mechanism under quasi-breakdown of ultra-thin gate oxide
Journal
Appl. Phys. Lett.
Author
Y. D. He, H. Guan, M. F. Li, B. J. Cho, and Z. Dong
Year
1999
Date
Oct. 1999.

Y. D. He, H. Guan, M. F. Li, B. J. Cho, and Z. Dong, "Conduction mechanism under quasi-breakdown of ultra-thin gate oxide", Appl. Phys. Lett., vol. 75, no. 16, pp. 2432-2434, Oct. 1999.