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Total 15건 1 페이지

2000
15

"A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's" H. Guan, M. F. Li, Y. D. He, B. J. Cho, and Z. Dong, IEEE Trans. on Electron Devices, Vol. 47, pp. 1608, Aug. 2000.
14

"Hot-carrier degradation mechanism in narrow- and wide- channel n-MOSFET's with recessed LOCOS isolation structure" J. M. P. Yue, W. K. Chim, B. J. Cho, D. S. H. Chan, W. H. Qin, Y. B. Kim, S. A. Jang, and I. S. Yeo, IEEE Electron Device Letters, Vol. 21, pp. 130, March 2000.
13

"Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films" C. H. Ang, C. H. Ling, Z. Y. Cheng, S. J. Kim, and B. J. Cho, J. Electrochem. Soc., Dec. 2000..
12

"Bias and thermal annealings of radiation-induced leakage currents in thin gate oxides" C. H. Ang, C. H. Ling, Z. Y. Cheng, S. J. Kim, and B. J. Cho, IEEE Trans. Nucl. Sci., Dec. 2000..
11

"Electron-beam irradiation-induced gate oxide degradation" B. J. Cho, P. F. Chong, E. F. Chor, M. S. Joo, and I. S. Yeo, J. Appl. Phys., Dec. 2000..
10

"Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides" C. H. Ang, C. H. Ling, B. J. Cho, S. J. Kim, and Z. Y. Cheng, Solid-State Electron., Nov. 2000..
9

"Annealing behavior of gate oxide leakage current after quasi-breakdown" Z. Xu, B. J. Cho, and M. F. Li, Microelectron. Rel., Oct. 2000..
8

"A comparative study of radiation-induced and stress-induced leakage currents in thin gate oxides" C. H. Ang, C. H. Ling, Z. Y. Cheng, S. J. Kim, and B. J. Cho, Semicond. Sci. Technol., Oct. 2000..
7

"Does short wavelength lithography process degrade the integrity of thin gate oxide?" S. J. Kim, B. J. Cho, P. F. Chong, E. F. Chor, C. H. Ang, C. H. Ling, M. S. Joo, and I. S. Yeo, Microelectron. Rel., Oct. 2000..
6

"Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias" C. H. Ang, C. H. Ling, Z. Y. Cheng, B. J. Cho, and S. J. Kim, J. Appl. Phys., Sep. 2000..
5

"Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide" C. H. Ang, C. H. Ling, Z. Y. Cheng, and B. J. Cho, J. Appl. Phys., Sep. 2000..
4

"Design of LIGBT protection circuit for smart power integration" J. Luo, Y. C. Liang, and B. J. Cho, IEEE Trans. Ind. Electron., Aug. 2000..
3

"Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias" C. H. Ang, C. H. Ling, Z. Y. Cheng, S. J. Kim, and B. J. Cho, Jpn. J. Appl. Phys., Jul. 2000..
2

"A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation" B. J. Cho, S. J. Kim, C. H. Ling, M. S. Joo, and I. S. Yeo, Solid-State Electron., Jul. 2000..
1

"Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions" P. F. Chong, B. J. Cho, E. F. Chor, M. S. Joo, and I. S. Yeo, Jpn. J. Appl. Phys., Apr. 2000..

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