Bias and thermal annealings of radiation-induced leakage currents in thin gate oxides
- Journal
- IEEE Trans. Nucl. Sci.
- Year
- 2000
C. H. Ang, C. H. Ling, Z. Y. Cheng, S. J. Kim, and B. J. Cho, "Bias and thermal annealings of radiation-induced leakage currents in thin gate oxides", IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2758-2764, Dec. 2000.
