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Annealing behavior of gate oxide leakage current after quasi-breakdown
Journal
Microelectron. Rel.
Author
Z. Xu, B. J. Cho, and M. F. Li
Year
2000
Date
Oct. 2000.

Z. Xu, B. J. Cho, and M. F. Li, "Annealing behavior of gate oxide leakage current after quasi-breakdown", Microelectron. Rel., vol. 40, no. 8-10, pp. 1341-1346, Oct. 2000.