Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias
- Journal
- J. Appl. Phys.
- Year
- 2000
C. H. Ang, C. H. Ling, Z. Y. Cheng, B. J. Cho, and S. J. Kim, "Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias", J. Appl. Phys., vol. 88, no. 5, pp. 3087-3089, Sep. 2000.