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Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide
Journal
J. Appl. Phys.
Author
C. H. Ang, C. H. Ling, Z. Y. Cheng, and B. J. Cho
Year
2000
Date
Sep. 2000.

C. H. Ang, C. H. Ling, Z. Y. Cheng, and B. J. Cho, "Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide", J. Appl. Phys., vol. 88, no. 5, pp. 2872-2876, Sep. 2000.