Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias
- Journal
- Jpn. J. Appl. Phys.
- Year
- 2000
C. H. Ang, C. H. Ling, Z. Y. Cheng, S. J. Kim, and B. J. Cho, "Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias", Jpn. J. Appl. Phys., vol. 39, no. 7B, pp. L757-L759, Jul. 2000.