Hot-carrier degradation mechanism in narrow- and wide- channel n-MOSFET's with recessed LOCOS isolation structure
- Journal
- IEEE Electron Device Letters
- Vol
- Vol. 21
- Page
- pp. 130
- Year
- 2000
J. M. P. Yue, W. K.
Chim, B. J. Cho, D. S. H.
Chan, W. H. Qin, Y. B. Kim, S. A. Jang, and I. S. Yeo, "Hot-carrier
degradation mechanism in narrow- and wide- channel n-MOSFET's with recessed
LOCOS isolation structure", IEEE Electron Device
Letters, Vol. 21, No. 3, pp. 130, March 2000