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Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultra-thin gate oxide
Journal
IEEE Trans. Electron Devices
Author
H. Guan, B. J. Cho, M. F. Li, Z. Xu, Y. D. He, and Z. Dong
Year
2001
Date
May. 2001.

H. Guan, B. J. Cho, M. F. Li, Z. Xu, Y. D. He, and Z. Dong, "Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultra-thin gate oxide", IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 1010-1013, May. 2001.