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Total 11건 1 페이지

2002
11

"Thermal Stability of (HfO2)x(Al2O3)1-x on Si" H. Y. Yu, N. Wu, M. F. Li, C. Zhu, B. J. Cho, D. L. Kwong, C. H. Tung, J. S. Pan, J. W. Chai, W. D. Wang, D. Z. Chi, C. H. Ang, J. Z. Zheng, Appl. Phys. Lett., Nov. 2002..
10

"A high performance MIM capacitor using HfO2 dielectrics" H. Hang, C. Zhu, Y. F. Lu, M. F. Li, B. J. Cho, and W. K. Choi, IEEE Electron Device Lett., Sep. 2002..
9

"Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation" X. Y. Chen, Y. F. Lu, B. J. Cho, Y. P. Zeng, and Y. H. Wu, Appl. Phys. Lett., Aug. 2002..
8

"Correlation between direct tunneling leakage current degradation and interface traps in ultrathin silicon dioxides" W. Y. Loh, B. J. Cho, and M. F. Li, Appl. Phys. Lett., Jul. 2002..
7

"Energy gap and band alignment for (HfO2)x(Al2O3)1-x on (100) Si" H. Y. Yu, M. F. Li, B. J. Cho, C. C. Yeo, M. S. Joo, D. L. Kwong, J. S. Pan, C. H. Ang, and J. Z. Zheng, Appl. Phys. Lett., Jul. 2002..
6

"Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs" C. M. Lek, B. J. Cho, C. H. Ang, S. S. Tan, W. Y. Loh, J. Z. Zhen, and C. Lap, Semiconduct. Sci. Technol., Jun. 2002..
5

"Investigation of quasi-breakdown mechanism through post-Quasi-Breakdown thermal annealing" W. Y. Loh, B. J. Cho, and M. F. Li, Jpn. J. Appl. Phys., May. 2002..
4

"Evolution of quasi-breakdown mechanism in thin gate oxides" W. Y. Loh, B. J. Cho, and M. F. Li, J. Appl. Phys., Apr. 2002..
3

"Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation" C. H. Ang, S. S. Tan, C. M. Lek, W. Lin, Z. J. Zheng, T. Chen, and B. J. Cho, Electrochem. Solid-State Lett., Apr. 2002..
2

"Negative bias temperature instability on plasma-nitrided silicon dioxide film" C. H. Ang, C. M. Lek, S. S. Tan, B. J. Cho, T. Chen, W. Lin, and J. Z. Zhen, Jpn. J. Appl. Phys., Mar. 2002..
1

"Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure" W. K. Chim, B. J. Cho, and J. M. P. Yue, Jpn. J. Appl. Phys., Jan. 2002..

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