Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs
- Journal
- Semiconduct. Sci. Technol.
- Year
- 2002
C. M. Lek, B. J. Cho, C. H. Ang, S. S. Tan, W. Y. Loh, J. Z. Zhen, and C. Lap, "Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs", Semiconduct. Sci. Technol., vol. 17, pp. L25-L28, 2002.
