Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure
- Journal
- Jpn. J. Appl. Phys.
- Year
- 2002
W. K. Chim, B. J. Cho, and J. M. P. Yue, "Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure", Jpn. J. Appl. Phys., vol. 41, no. 1, pp. 47-53, Jan. 2002.