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Total 14건 1 페이지

2003
14

"High-performance MIM Capacitor using ALD high-K HfO2-Al2O3 laminate dielectrics" S. J. Ding, H. Hu, H. F. Lim, S. J. Kim, X. F. Yu, C. Zhu, M. F. Li, B. J. Cho, D. S. H. Chan, S. Rustagi, M. B. Yu, A. Chin, and D. L. Kwong, IEEE Electron Device Lett., Dec. 2003..
13

"Improvement of electrical properties of MOCVD HfO2 by multi-step deposition process" C. C. Yeo, B. J. Cho, M. S. Joo, S. J. Whoang, and D. L. Kwong, Electrochem. and Solid-State Lett., Nov. 2003..
12

"Formation of Hafnium-Aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process" M. S. Joo, B. J. Cho, C. C. Yeo, D. S. H. Chan, S. J. Whoang, N. Balasubramanian, and D. L. Kwong, IEEE Trans. Electron Devices, Oct. 2003..
11

"Very high density RF MIM capacitors (17 fF/um2) using high-K Al2O3 doped Ta2O5 dielectrics" M. Y. Yang, C. H. Huang, A. Chin, C. Zhu, B. J. Cho, M. F. Li, and D. L. Kwong, IEEE Trans. Microw. Wireless Compon. Lett., Oct. 2003..
10

"Physical and electrical characterization of HfO2 Metal-Insulator-Metal capacitors for Si analog circuit applications" H.Hu, C. Zhu, Y. F. Lu, Y. H. Wu, T. Liew, M. F. Li, B. J. Cho, W. K. Choi, and N. Yakovlev, J. Appl. Phys., Jul. 2003..
9

"Lanthanide (Tb)-doped HfO2 for high density MIM capacitors" S. J. Kim, B. J. Cho, M. F. Li, Albert Chin, and D. L. Kwong, IEEE Electron Device Lett, Jul. 2003..
8

"PVD HfO2 for high precision MIM capacitor applications" S. J. Kim, B. J. Cho, M. F. Li, Albert Chin, and D. L. Kwong, EEE Electron Device Lett., Jun. 2003..
7

"Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed laser deposition argon and oxygen ambient" X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, M. H. Liu, D. Y. Dai, and W. D. Dong, J. Appl. Phys., May. 2003..
6

"An integratable dual metal gate CMOS process using and ultra-thin aluminum nitride buffer layer" C. S. Park, B. J. Cho, and D. L. Kwong, IEEE Electron Device Lett., May. 2003..
5

"Localized oxide degradation in ultra-thin gate dielectric and its statistical analysis" W. Y. Loh, B. J. Cho, C. H. Ang, J. Z. Zheng, and D. L. Kwong, IEEE Trans. on Electron Devices, Apr. 2003..
4

"Dependence of Chemical Composition Ratio on Electrical Properties of HfO2-Al2O3 Gate Dielectric" M. S. Joo, B. J. Cho, C. C. Yeo, N. Wu, H. Y Yu, C. Zhu, M. F. Li, D. L. Kwong, N. Balasubramanian, Jpn. J. Appl. Phys, Mar. 2003..
3

"MIM capacitors using Atomic-Layer-Deposited high-K (HfO2)1-x(Al2O3)x dielectrics" H. Hu, C. Zhu, X. Yu, A. Chin, M. F. Li, B. J. Cho, D. L. Kwong, P. D. Foo, M. B. Yu, IEEE Electron Device Lett., Feb. 2003..
2

"A high density MIM capacitor (13fF/um2) using ALD HfO2 dielectrics" X. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D. L. Kwong, P. D. Foo, M. B. Yu, IEEE Electron Device Lett., Feb. 2003..
1

"Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation" C. H. Poon, B. J. Cho, Y. F. Lu, M. Bhat, and A. See, J. Vacuum Sci. Technol. B, Feb. 2003..

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