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Very high density RF MIM capacitors (17 fF/um2) using high-K Al2O3 doped Ta2O5 dielectrics
Journal
IEEE Trans. Microw. Wireless Compon. Lett.
Author
M. Y. Yang, C. H. Huang, A. Chin, C. Zhu, B. J. Cho, M. F. Li, and D. L. Kwong
Year
2003
Date
Oct. 2003.

M. Y. Yang, C. H. Huang, A. Chin, C. Zhu, B. J. Cho, M. F. Li, and D. L. Kwong, "Very high density RF MIM capacitors (17 fF/um2) using high-K Al2O3 doped Ta2O5 dielectrics, IEEE Trans. Microw. Wireless Compon. Lett. , vol. 13, no. 10, pp. 431-433, Oct. 2003.