An integratable dual metal gate CMOS process using and ultra-thin aluminum nitride buffer layer
- Journal
- IEEE Electron Device Lett.
- Year
- 2003
C. S. Park, B. J. Cho, and D. L. Kwong, "An integratable dual metal gate CMOS process using and ultra-thin aluminum nitride buffer layer," IEEE Electron Device Lett., vol. 24, no. 5, p. 298, May. 2003.