Physical and electrical characterization of HfO2 Metal-Insulator-Metal capacitors for Si analog circuit applications
- Journal
- J. Appl. Phys.
- Year
- 2003
H.Hu, C. Zhu, Y. F. Lu, Y. H. Wu, T. Liew, M. F. Li, B. J. Cho, W. K. Choi, and N. Yakovlev, "Physical and electrical characterization of HfO2 Metal-Insulator-Metal capacitors for Si analog circuit applications," J. Appl. Phys., vol. 94, no. 1, p. 551, 2003.
