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Dependence of Chemical Composition Ratio on Electrical Properties of HfO2-Al2O3 Gate Dielectric
Journal
Jpn. J. Appl. Phys
Author
M. S. Joo, B. J. Cho, C. C. Yeo, N. Wu, H. Y Yu, C. Zhu, M. F. Li, D. L. Kwong, N. Balasubramanian
Year
2003
Date
Mar. 2003.

M. S. Joo, B. J. Cho, C. C. Yeo, N. Wu, H. Y Yu, C. Zhu, M. F. Li, D. L. Kwong, N. Balasubramanian, "Dependence of Chemical Composition Ratio on Electrical Properties of HfO2-Al2O3 Gate Dielectric", Jpn. J. Appl. Phys., vol. 42, no. 3A, pp. L220-L222, March. 2003.