Charge Trapping and Breakdown Mechanism in HfAlO/TaN Gate Stack Analyzed using Carrier Separation
- Journal
- IEEE Trans. Dev. Mat. Rel.
- Year
- 2004
W. Y. Loh, B. J. Cho, M. S. Joo, M. F. Li, D. S. H. Chan, S. Mathew, and D. L. Kwong, "Charge Trapping and Breakdown Mechanism in HfAlO/TaN Gate Stack Analyzed using Carrier Separation," IEEE Trans. Dev. Mat. Rel., vol. 4, no. 4, pp. 696-703, Dec. 2004.
