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MOS characteristics of substituted Al gate on high-K dielectric
Journal
IEEE Electron Device Lett.
Author
C. S. Park, B. J. Cho, and D. L. Kwong
Year
2004
Date
Nov. 2004.

C. S. Park, B. J. Cho, and D. L. Kwong, "MOS characteristics of substituted Al gate on high-K dielectric," IEEE Electron Device Lett., vol. 25, no. 11, pp. 725-727, Nov. 2004.