Improvement of voltage linearity in high-K MIM capacitors using HfO2/SiO2 stacked dielectric
- Journal
- IEEE Electron Device Lett.
- Year
- 2004
S. J. Kim, B. J. Cho, M. F. Li, S. J. Ding, C. Zhu, M. B. Yu, B. Narayanan, A. F. Chin, and D. L. Kwong, "Improvement of voltage linearity in high-K MIM capacitors using HfO2/SiO2 stacked dielectric," IEEE Electron Device Lett., vol. 25, no. 8, pp. 538-540, Aug. 2004.