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Over-erase phenomenon in SONOS-type Flash memory and its minimization using a hafnium oxide charge storage layer
Journal
IEEE Trans. Electron Devices
Author
Y. N. Tan, W. K. Chim, B. J. Cho, and W. K. Choi
Year
2004
Date
Jul. 2004.

Y. N. Tan, W. K. Chim, B. J. Cho, and W. K. Choi, "Over-erase phenomenon in SONOS-type Flash memory and its minimization using a hafnium oxide charge storage layer," IEEE Trans. Electron Devices, vol. 51, no. 7, pp. 1143-1147, Jul. 2004.