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Feasibility Study of Using Thin Aluminum Nitride Film as A Buffer Layer for Dual Metal Gate Process
Journal
Thin Solid Films
Author
C. S. Park, B. J. Cho, N. Balasubramanian, and D.-L. Kwong
Year
2004
Date
Sep. 2004.

C. S. Park, B. J. Cho, N. Balasubramanian, and D.-L. Kwong, "Feasibility Study of Using Thin Aluminum Nitride Film as A Buffer Layer for Dual Metal Gate Process," Thin Solid Films, vol. 462-463, pp. 15-18, Sep. 2004.