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Total 7건 1 페이지

2005
7

"Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric" M. S. Joo, B. J. Cho, N. Balasubramanian, and D. L. Kwong, IEEE Electron Device Lett., Dec. 2005.
6

"Integrated high K (K~19) MIM capacitor with Cu/Low-K interconnects for RF application" M. B. Yu, Y. Z. Xiong, S. J. Kim, S. Balakumar, C. Zhu, M. F. Li, B. J. Cho, G. Q. Lo, N. Balasubramanian, and D. L. Kwong, IEEE Electron Device Lett., Nov. 2005..
5

"Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning" C. S. Park and B. J. Cho, IEEE Electron Device Lett., Nov. 2005.
4

"Electron mobility enhancement using ultrathin pure Ge on Si substrate" C. C. Yeo, B. J. Cho, F. Gao, S. J. Lee, M. H. Lee, C-Y. Yu, C. W. Liu, L. J. Tang, and T. W. Lee, IEEE Electron Device Lett., Oct. 2005..
3

"Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing" C. H. Poon, L. S. Tan, B. J. Cho, and A. Y. Du, J. Electrochem. Soc., Oct. 2005..
2

"Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers" S. J. Kim, B. J. Cho, M. B. Yu, M. F. Li, Y. Z. Xiong, C. Zhu, A. Chin and D. L. Kwong, IEEE Electron Device Lett., Sep. 2005..
1

"Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor depositioin" X. Chen, Y. Lu, L. J. Tang, Y. H. Wu, B. J. Cho, S. J. Xu, J. R. Dong, and W. D. Song, J. Appl. Phys., Jan. 2005..

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