Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing
- Journal
- J. Electrochem. Soc.
- Year
- 2005
C. H. Poon, L. S. Tan, B. J. Cho, and A. Y. Du, "Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing," J. Electrochem. Soc., vol. 152, no. 12, pp. G895-G899, Dec. 2005.
