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Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric
Journal
IEEE Electron Device Lett.
Author
M. S. Joo, B. J. Cho, N. Balasubramanian, and D. L. Kwong
Year
2005
Date
Dec. 2005

M. S. Joo, B. J. Cho, N. Balasubramanian, and D. L. Kwong, "Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric," IEEE Electron Device Lett., vol. 26, no. 12, pp. 882-884, Dec. 2005.