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Hafnium Aluminum Oxide as charge storage and blocking layers in SONOS type Non-volatile memory for high speed operation
Journal
IEEE Trans. Electron Devices
Author
Y. N. Tan, W. K. Chim, W. K. Choi, M. S. Joo, and B. J. Cho
Year
2006
Date
Apr. 2006.

Y. N. Tan, W. K. Chim, W. K. Choi, M. S. Joo, and B. J. Cho, "Hafnium Aluminum Oxide as charge storage and blocking layers in SONOS type Non-volatile memory for high speed operation", IEEE Trans. Electron Devices, vol. 53, no. 4, pp. 654-662, Apr. 2006.