Journals

Home
Publication
Journals

Total 11건 1 페이지

2007
11

"B-doping of vapor-liquid-solid grown Au-catalyzed and Al-catalyzed Si nanowires: effects of B2H6 gas during Si nanowires growth and B-doping by post-synthesis in-situ plasma process" S. J. Whang, Sungjoo Lee, W. F. Yang, B. J. Cho, Y. F. Liew, D. Z. Chi, and D. L. Kwong, Nanotechnolgy, Jun. 2007..
10

"Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric" G. K. Kalapati, Y. Tong, W. Y. Loh, H. K. Mun, and B. J. Cho, Appl. Phys. Lett., May. 2007..
9

"Complementary Metal-Oxide-Semiconductor compatible Al-catalyzed silicon nanowires" S. J. Whang, S. J. Lee, W. F. Yang, B. J. Cho, Y. F. Liew, and D. L. Kwong, Electrochem. and Solid-State Lett., Mar. 2007..
8

"Border-Trap CharacteNrization in High-K Strained-Si MOSFETs" D. Maji, S. P. Duttagupta, V. R. Rao, C. C. Yeo, and B. J. Cho, IEEE Electron Device Lett., Aug. 2007..
7

"Study on the synthesis of high quality single crystalline SixGex nanowire and its transport properties" S. J. Whang, Sungjoo Lee, W. F. Yang, B. J Cho, and D. L. Kwong, Appl. Phys. Lett., Aug. 2007..
6

"Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance" W. Y. Loh, H. Zang, H. J. Oh, K. J. Choi, H. S. Nguyen, G. Q. Lo, and B. J. Cho, IEEE TRANSACTIONS ON ELECTRON DEVICES, Dec. 2007..
5

"Tensile-Strained Germanium CMOS Integration on Silicon" H. Zang, W. Y. Loh, J. D. Ye, G. Q. Lo, and B. J. Cho,, IEEE Electron Device Lett, Dec. 2007..
4

"Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques" H. J. Oh, K. J. Choi, W. Y. Loh, T. Htoo, S. J. Chua and B. J. Cho, J. Appl. Phys., Sep. 2007..
3

"Electrical and Interfacial Characterization of Atomic Layer Deposited High-K Gate Dielectrics on GaAs for Advanced CMOS Devices" G.K.Dalapati, Y.Tong, W.Y.Loh, H.K.Mun, and B.J.Cho, IEEE Trans. on Electron. Devices, Aug. 2007..
2

"P-Type Floating Gate for Retention and P/E Window Improvement of Flash Memory Devices" C. Shen, J. Pu,M. -F. Li, and B. J. Cho, IEEE Trans. Electron Devices, Aug. 2007..
1

"Low energy N2 ion bombardment for removal of (HfO2)x(SiON)1-x in dilute HF" W. S. Hwang, B. J. Cho, D. S. H. Chan, and W. J. Yoo, J. Vacuum Sci. and Technol. -Section A, Jul. 2007..

검색