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Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Author
W. Y. Loh, H. Zang, H. J. Oh, K. J. Choi, H. S. Nguyen, G. Q. Lo, and B. J. Cho
Year
2007
Date
Dec. 2007.

W. Y. Loh, H. Zang, H. J. Oh, K. J. Choi, H. S. Nguyen, G. Q. Lo,  and B. J. Cho, "Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance," IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 54, pp. 3292-3298, Dec. 2007.