Electrical and Interfacial Characterization of Atomic Layer Deposited High-K Gate Dielectrics on GaAs for Advanced CMOS Devices
- Journal
- IEEE Trans. on Electron. Devices
- Year
- 2007
G.K.Dalapati, Y.Tong, W.Y.Loh, H.K.Mun, and B.J.Cho, "Electrical and Interfacial Characterization of Atomic Layer Deposited High-K Gate Dielectrics on GaAs for Advanced CMOS Devices", IEEE Trans. on Electron. Devices, vol. 54, no. 8, pp. 1831-1837, Aug. 2007.
