Journals

Home
Publication
Journals

Total 11건 1 페이지

2008
11

"Demonstration of Lg ∼ 55 nm pMOSFETs With Si/Si0.25Ge0.75/Si Channels, High Ion/Ioff (> 5 × 104), and Controlled Short Channel Effects (SCEs)" S. H. Lee, P. Majhi, J. W. Oh, B. Sassman, C. Young, A. Bowonder, W. Y. Loh, K. J. Choi, B. J. Cho, H. D. Lee, P. Kirsch, H. R. Harris, W. Tsai, S. Datta, H. H. Tseng, S. K. Banerjee, and R. Jammy, IEEE Electron Device Lett, Sep. 2008..
10

"Metal Carbides for Band-Edge Work Function Metal Gate CMOS Devices" W. S. Hwang, D. S. H. Chan, and B. J. Cho, IEEE Trans. Electron Devices, Sep. 2008..
9

"Endurance Reliability of Multilevel-Cell Flash Memory Using a ZrO2/Si3N4 Dual Charge Storage Layer" G. Zhang, W. S. Hwang, S. H. Lee, B. J. Cho, and W. J. Yoo, IEEE Trans. Electron Devices, Sep. 2008..
8

"Demonstration of High-Performance PMOSFETs Using Si-SixGe1-x-Si Quantum Wells With High-κ/Metal-Gate Stacks" P. Majhi, P. Kalra, R. Harris, K. J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B. J. Cho, S. Banerjee, W. Tsai, H. Tseng, and R. Jammy, IEEE Electron Device Lett., Jan. 2008..
7

"Effects of Volatility of Etch By-products on Surface Roughness During Etching of Metal Gates in Cl2" W. S. Hwang, B. J. Cho, D.S.H. Chan, S. W. Lee, and W. J. Yoo, J. Electrochem. Soc., Jan. 2008..
6

"Process and Material Properties of HfLaOx Prepared by Atomic Layer Deposition" W. He, D. S. H. Chan, S. J. Kim, Y. S. Kim, S. T. Kim, and B. J. Cho, J. Electrochem. Soc., Aug. 2008..
5

"Carbon Doped Polysilicon Floating Gate for Improved Data Retention and P/E Window of Flash Memory" J. Pu, S. J. Kim, S. H. Lee, Y. S. Kim, S. T. Kim, K. J. Choi and B. J. Cho, IEEE Electron Device Lett., Jul. 2008..
4

"Evaluation of Gadolinium Oxide as a Blocking Layer of Charge Trap Flash Memory Cell" J. Pu, S. J. Jim, Y. S. Kim and B. J. Cho, Electrochem. and Solid-State Let., Jun. 2008..
3

"Multi-layer high-k interpoly dielectric for floating gate flash memory devices" L. Zhang, W. He, D. S.H.Chan, B. J. Cho, Solid State Electron., Apr. 2008..
2

"Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism" H. Zang, S. J. Lee, W. Y. Loh, J. Wang, M. B. Yu, G. Q.Lo, D. L. Kwong, and B. J. Cho, Appl. Phys. Lett., Feb. 2008..
1

"Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe-Schottky Barrier" H. Zang, S. J. Lee, W. Y. Loh, J. Wang, K. T. Chua, M. B. Yu, B. J. Cho, G. Q. Lo, and D. L. Kwong, IEEE Electron Device Lett., Feb. 2008..

검색