Metal Carbides for Band-Edge Work Function Metal Gate CMOS Devices
- Journal
- IEEE Trans. Electron Devices
- Year
- 2008
W. S. Hwang, D. S. H. Chan, and B. J. Cho, “Metal Carbides for Band-Edge Work Function Metal Gate CMOS Devices”, IEEE Trans. Electron Devices, vol. 55, no. 9, pp. 2469-2474, Sep. 2008.
