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Endurance Reliability of Multilevel-Cell Flash Memory Using a ZrO2/Si3N4 Dual Charge Storage Layer
Journal
IEEE Trans. Electron Devices
Author
G. Zhang, W. S. Hwang, S. H. Lee, B. J. Cho, and W. J. Yoo
Year
2008
Date
Sep. 2008.

G. Zhang, W. S. Hwang, S. H. Lee, B. J. Cho, and W. J. Yoo, “Endurance Reliability of Multilevel-Cell Flash Memory Using a ZrO2/Si3N4 Dual Charge Storage Layer”, IEEE Trans. Electron Devices, vol. 55, no. 9, pp. 2361-2369, Sep. 2008.