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Total 5건 1 페이지

2009
5

"Performance in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide" W. He, J. Pu, D. S. H. Chan, and B. J. Cho, IEEE Trans. Electron Devices, Nov. 2009..
4

"Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices" J. Pu, D. S. H. Chan, S. J. Kim, and B. J. Cho, IEEE Trans. Electron Devices, Nov. 2009..
3

"Mono-Layer Graphene Growth on Sputtered Thin Film Platinum" B. J. Kang, J. H. Mun, C. Y. Hwang and B. J. Cho, J. Appl. Phys., Nov. 2009..
2

"Cubic-Structured HfO2 With Optimized Doping of Lanthanum for Higher Dielectric Constant" W. He, L. Zhang, D. S. H. Chan, and B. J. Cho, IEEE Electron Device Lett., Jun. 2009..
1

"Energy-Band-Engineered Unified-RAM (URAM) Cell on Buried Si1-yCy Substrate for Multifunctioning Flash Memory and 1T-DRAM" J. W. Han, S. W. Ryu, C. J. Kim, S. J. Choi, S. H. Kim, J. H. Ahn, D. H. Kim, K. J. Choi, B. J. Cho, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y. K. Choi, IEEE Trans. Electron Devices, Apr. 2009..

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