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Performance in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide
Journal
IEEE Trans. Electron Devices
Author
W. He, J. Pu, D. S. H. Chan, and B. J. Cho
Year
2009
Date
Nov. 2009.

W. He, J. Pu, D. S. H. Chan, and B. J. Cho, “Performance in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide”, IEEE Trans. Electron Devices, vol. 56, no. 11, pp. 2746-2751, Nov. 2009.