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Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices
Journal
IEEE Trans. Electron Devices
Author
J. Pu, D. S. H. Chan, S. J. Kim, and B. J. Cho
Year
2009
Date
Nov. 2009.

J. Pu, D. S. H. Chan, S. J. Kim, and B. J. Cho,“Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices”, IEEE Trans. Electron Devices, vol. 56, no. 11, pp. 2739-2745, Nov. 2009.