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Cubic-Structured HfO2 With Optimized Doping of Lanthanum for Higher Dielectric Constant
Journal
IEEE Electron Device Lett.
Author
W. He, L. Zhang, D. S. H. Chan, and B. J. Cho
Year
2009
Date
Jun. 2009.

W. He, L. Zhang, D. S. H. Chan, and B. J. Cho, “Cubic-Structured HfO2 With Optimized Doping of Lanthanum for Higher Dielectric Constant”, IEEE Electron Device Lett., vol. 30, no. 6, pp. 623-625, Jun. 2009.