Improvement of Memory Performance by High Temperature Annealing of the Al2O3 Blocking Layer in a Charge-Trap Type Flash Memory Device
- Journal
- Appl. Phys. Lett.
- Year
- 2010
J. K. Park, Y. M. Park, S. K. Lim, J. S.Oh, M. S. Joo, K. Hong, and B. J. Cho, "Improvement of Memory Performance by High Temperature Annealing of the Al2O3 Blocking Layer in a Charge-Trap Type Flash Memory Device", Appl. Phys. Lett., vol. 96, no. 22, pp. 222902-1-222902-3, May. 2010.