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Total 9건 1 페이지

2011
9

"Graphene Gate Electrode for MOS Structure-Based Electronic Devices" J. K. Park, S. M. Song, J. H. Mun, and B. J. Cho, Nano Letter, Nov. 2011..
8

"Dirac Voltage Tunability by Hf1-xLaxO Gate Dielectric Composition Modulation for Graphene Field Effect Devices" J. G. Oh, Y. S. Shin, W. C. Shin, O. J. Sul, and B. J. Cho, Appl. Phys. Lett., Nov. 2011..
7

"ANALYSIS ON SWITCHING MECHANISM OF GRAPHENE OXIDE RESISTIVE MEMORY DEVICE" S. K. Hong, J. E. Kim, S. O. Kim, and B. J. Cho, J. Appl. Phys., Aug. 2011..
6

"Lanthanum-Oxide-Doped Nitride Charge Trap Layer for a TANOS Memory Device" J. K. Park, Y. M. Park, S. H. Lee, S. K. Lim, J. S. Oh, M. S. Joo, K. Hong, and B. J. Cho, IEEE Trans. Electron Devices, Oct. 2011..
5

"Highly Air-Stable Electrical Performance of Graphene Field Effect Transistors by Interface Engineering with Amorphous Fluoropolymer" W. C. Shin, S. Seo, and B. J. Cho, Appl. Phys. Lett., Mar. 2011..
4

"Crystallized HfLaO Embedded Tetragonal ZrO2 for Dynamic Random Access Memory Capacitor Dielectrics" Y. S. Shin, K. K. Min, S. H. Lee, S. K. Lim, J. S. Oh, K. J. Lee, K. Hong, and B. J. Cho, Appl. Phys. Lett., Apr. 2011..
3

"Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device" J. K. Park, Y. M. Park, S. H. Lee, S. K. Lim, J. S. Oh, M. S. Joo, K. Hong, and B. J. Cho, Jpn. J. Appl. Phys., Apr. 2011..
2

"Thermoelectric properties of screen-printed ZnSb film" H. B. Lee, J. H. We, H. J. Yang, K. J. Kim, K. C. Choi, and B. J. Cho, Thin Solid Films,, Jan. 2011..
1

"Thin-Film Thermoelectric Module for Power Generator Applications Using a Screen-Printing Method" H. B. Lee, H. J. Yang, J. H. We, K. J. Kim, K. C. Choi, and B. J. Cho, J. Electron. Mat., Jan. 2011..

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