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Dirac Voltage Tunability by Hf1-xLaxO Gate Dielectric Composition Modulation for Graphene Field Effect Devices
Journal
Appl. Phys. Lett.
Author
J. G. Oh, Y. S. Shin, W. C. Shin, O. J. Sul, and B. J. Cho
Year
2011
Date
Nov. 2011.

J. G. Oh, Y. S. Shin, W. C. Shin, O. J. Sul, and B. J. Cho, "Dirac Voltage Tunability by Hf1-xLaxO Gate Dielectric Composition Modulation for Graphene Field Effect Devices", Appl. Phys. Lett., vol 99, pp. 193503-1-193503-3, Nov. 2011.