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Lanthanum-Oxide-Doped Nitride Charge Trap Layer for a TANOS Memory Device
Journal
IEEE Trans. Electron Devices
Author
J. K. Park, Y. M. Park, S. H. Lee, S. K. Lim, J. S. Oh, M. S. Joo, K. Hong, and B. J. Cho
Year
2011
Date
Oct. 2011.

J. K. Park, Y. M. Park, S. H. Lee, S. K. Lim, J. S. Oh, M. S. Joo, K. Hong, and B. J. Cho, " Lanthanum-Oxide-Doped Nitride Charge Trap Layer for a TANOS Memory Device”, IEEE Trans. Electron Devices, vol. 58, no. 10, pp. 3314-3320, Oct. 2011.