First Demonstration of Ultra-Thin SiGe-Channel Junctionless Accumulation-Mode (JAM) Bulk FinFETs on Si Substrate with PN Junction-Isolation Scheme
- Journal
- IEEE J. Electron Devices Soc.
- Year
- 2014
Dong-Hyun Kim, Tae Kyun Kim, Young Gwang Yoon, Byeong-Woon Hwang, Yang-Kyu Choi, Byung Jin Cho, and Seok-Hee Lee, "First Demonstration of Ultra-Thin SiGe-Channel Junctionless Accumulation-Mode (JAM) Bulk FinFETs on Si Substrate with PN Junction-Isolation Scheme", IEEE J. Electron Devices Soc., vol. 2, no. 5, pp. 123-127, Sep. 2014.