The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts
- Journal
- IEEE ELECTRON DEVICE LETTERS
- Year
- 2015
Y. J. Seo, S. Lee, S. H. C. Baek, W. S. Hwang, H. Y. Yu, S. H. Lee, and B. J. Cho, "The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts," IEEE ELECTRON DEVICE LETTERS, vol. 36, no. 10, pp. 997-1000, Oct. 2015.
